Method of fabricating semiconductor device

A method of fabricating a semiconductor device, comprising:

• exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si;
• and
• exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface;
• wherein the epitaxial growth of the crystal film includes growing a Si crystal film by exposing the surface of the semiconductor substrate to the Si-containing gas, growing a Ge crystal film by exposing the surface of the semiconductor substrate to the Ge-containing gas, or growing a SiGe crystal film by exposing the surface of the semiconductor substrate to the Si-containing gas and the Ge-containing gas;
• and
• a timing of finishing the exposure of the surface of the semiconductor substrate to the halogen-containing gas substantially coincides with a timing of starting the exposure of the surface to the atmosphere.

A method of fabricating a semiconductor device, comprising:

• exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si;
• and
• exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface;
• wherein a timing of finishing the exposure of the surface of the semiconductor substrate to the halogen-containing gas coincides with or is after a timing of starting the exposure of the surface to the atmosphere;
• the atmosphere contains the Si-containing gas and the Ge-containing gas;
• and
• a timing of starting the exposure of the surface of the semiconductor substrate to the Si-containing gas is before a timing of starting the exposure of the surface to the Ge-containing gas.

A method of fabricating a semiconductor device, comprising:

• exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si;
• and
• exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface;
• wherein the epitaxial growth of the crystal film includes growing a Si crystal film by exposing the surface of the semiconductor substrate to the Si-containing gas, growing a Ge crystal film by exposing the surface of the semiconductor substrate to the Ge-containing gas, or growing a SiGe crystal film by exposing the surface of the semiconductor substrate to the Si-containing gas and the Ge-containing gas;
• a timing of finishing the exposure of the surface of the semiconductor substrate to the halogen-containing gas coincides with or is after a timing of starting the exposure of the surface to the atmosphere;
• the atmosphere contains the Si-containing gas and the Ge-containing gas;
• and
• a timing of starting the exposure of the surface of the semiconductor substrate to the Si-containing gas is before a timing of starting the exposure of the surface to the Ge-containing gas.