Process for enhancing solubility and reaction rates in supercritical fluids

A method for enhancing the rate of deposition at the surface of a semiconductor substrate comprising, providing a supercritical fluid containing at least one reactant comprising a metal-containing composition comprising one or more of Al, Au, Ba, Co, Cr, Ga, In, Ir, Mo, Ni, Pt, Pd, Re, Rh, Ru, Sn, Sr, Tl, W, and Zr;

• said supercritical fluid being maintained at above its critical point, exposing at least a portion of said surface of said semiconductor substrate to said supercritical fluid, applying acoustic energy by coupling an energy source directly to said semiconductor substrate, and reacting said at least one reactant to deposit a layer of material onto at least a portion of the surface of said semiconductor substrate.

A method for enhancing the rate of deposition at the surface of a semiconductor substrate comprising, providing a supercritical fluid comprising at least one reactant comprising a semiconductor metal-containing composition comprising one or more of B, Ge, As, Sb, Te, and Se;

• said supercritical fluid being maintained at above its critical point, exposing at least a portion of said surface of said semiconductor substrate to said supercritical fluid, applying acoustic energy by coupling an energy source directly to said semiconductor substrate, and reacting said at least one reactant to deposit a layer of material onto at least a portion of the surface of said semiconductor substrate.

A method for enhancing the rate of deposition of a metal-containing film at the surface of a semiconductor substrate comprising, providing a supercritical fluid containing at least one metal-containing or semiconductor metal-containing reactant, said supercritical fluid being maintained at above its critical point, exposing at least a portion of said surface of said semiconductor substrate to said supercritical fluid, applying acoustic energy to said supercritical fluid by coupling an ultrasonic energy source directly to said semiconductor substrate, and reacting said at least one metal-containing or semiconductor metal-containing reactant to cause a metal-containing or semiconductor metal-containing film to be deposited onto at least a portion of said surface of said semiconductor substrate.

A method for enhancing the rate of deposition at the surface of a semiconductor substrate comprising, providing a supercritical fluid containing at least one reactant, said supercritical fluid being maintained at above its critical point, exposing at least a portion of said surface of said semiconductor substrate to said supercritical fluid, applying acoustic energy, said acoustic energy comprising ultrasonic energy which is supplied to said supercritical fluid by coupling an ultrasonic source directly to said semiconductor substrate;

• and reacting said at least one reactant to deposit a layer of material onto at least a portion of the surface of said semiconductor substrate.

A method for enhancing the rate of deposition of a metal-containing film at the surface of a semiconductor substrate comprising, providing a supercritical fluid containing at least one metal-containing or semiconductor metal-containing reactant, said supercritical fluid being maintained at above its critical point, exposing at least a portion of said surface of said semiconductor substrate to said supercritical fluid, applying acoustic energy to said supercritical fluid by coupling an energy source directly to said semiconductor substrate, and reacting said at least one metal-containing or semiconductor metal-containing reactant to cause a metal-containing or semiconductor metal-containing film to be deposited onto at least a portion of said surface of said semiconductor substrate.