Low-temperature formation of polycrystalline semiconductor films via enhanced metal-induced crystallization

A method of forming polycrystalline semiconductor films, comprising:

• depositing a metal-semiconductor layer over a substrate;
• said metal-semiconductor layer comprises a metal into which is incorporated between 0.5 to 5 percent of a semiconductor material;
• forming an interfacial membrane over said metal-semiconductor layer;
• depositing an amorphous semiconductor material over said interfacial membrane;
• and
• sufficiently annealing said semiconductor material to induce a layer exchange between said metal-semiconductor layer and said amorphous semiconductor layer which crystallizes to form a polycrystalline semiconductor layer.

In a method for metal-induced crystallization of a semiconductor material during formation of a polycrystalline semiconductor film, the improvement comprising:

• incorporating a small percentage of the semiconductor material within the metal used for inducing crystallization;
• wherein an initial crystallization temperature is reduced;
• wherein said metal comprises aluminum;
• wherein said semiconductor material comprises amorphous silicon;
• and
• wherein aluminum-induced crystallization of said amorphous silicon is reduced by at least approximately 100° C. by incorporating approximately 2% Si into said aluminum.

A method for lowering the initial crystallization temperature during metal-induced crystallization of a semiconductor material during formation of a semiconductor film, comprising:

• incorporating a small percentage of the semiconductor material within the metal used for inducing crystallization;
• wherein said metal comprises aluminum;
• wherein said semiconductor material comprises amorphous silicon;
• and
• wherein aluminum-induced crystallization of said amorphous silicon is reduced by at least approximately 100° C. by incorporating approximately 2% Si into said aluminum.

A method of fabricating a semiconductor film, comprising:

• incorporating a small percentage of a semiconductor material into a metal material to create a semiconductor-metal composite;
• and
• forming a film of said semiconductor material from said semiconductor-metal composite;
• wherein said metal comprises aluminum;
• wherein said semiconductor material comprises amorphous silicon;
• and
• wherein aluminum-induced crystallization of said amorphous silicon is reduced by at least approximately 100° C. by incorporating approximately 2% Si into said aluminum.