Method for manufacturing semiconductor wafer

A method for manufacturing a semiconductor device comprising the steps of:

• forming a bond layer over a surface of a first semiconductor wafer comprising single crystal semiconductor;
• forming a separation layer below the bond layer by irradiating the first semiconductor wafer with hydrogen molecular ions by an ion doping apparatus comprising a gas inlet to introduce hydrogen as a working gas, an ion source including a filament for emitting thermo electrons and a plurality of magnet rings arranged around a chamber;
• bonding the bond layer of the first semiconductor wafer to one surface of a second semiconductor wafer;
• forming a single crystal semiconductor layer on the second semiconductor wafer by separating a part of the first semiconductor wafer along a cleavage plane which is inside the separation layer or which is an interface of the separation layer by performing heat treatment;
• forming an element isolation insulating layer in the single crystal semiconductor layer;
• forming a gate electrode over the single crystal semiconductor layer with a first insulating film therebetween;
• forming side wall insulating layers;
• forming impurity regions in the single crystal semiconductor layer;
• and
• forming a silicide on the gate electrode and the impurity regions;
• wherein the second semiconductor wafer includes the bond layer over the surface of the second semiconductor wafer and the single crystal semiconductor layer over the bond layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming an element isolation insulating layer in a single crystal semiconductor layer, the single crystal semiconductor layer formed over a first semiconductor wafer with a bond layer therebetween;
• forming a gate electrode over the single crystal semiconductor layer with a first insulating film therebetween;
• forming side wall insulating layers;
• and
• forming impurity regions in the single crystal semiconductor layer;
• wherein the single crystal semiconductor layer is formed by the steps of,
• forming a separation layer by irradiating a surface of a second semiconductor wafer comprising single crystal semiconductor with hydrogen molecular ions by an ion doping apparatus comprising an ion source including a gas inlet to introduce hydrogen as a working gas, a filament for emitting thermo electrons and a plurality of magnet rings arranged around a chamber;
• bonding the surface of the second semiconductor wafer to the first semiconductor wafer;
• and
• separating a part of the second semiconductor wafer along a cleavage plane which is inside the separation layer or which is an interface of the separation layer by performing heat treatment.