Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a release layer over a substrate;
• forming an element formation layer including a semiconductor element over the release layer;
• providing a support base material over the element formation layer;
• forming a groove in the element formation layer with a laser beam in order to generate peeling at an interface between the release layer and the substrate;
• wetting a surface which is exposed by the generation of peeling with liquid;
• and
• further peeling the element formation layer from the substrate by winding the element formation layer and the support base material around a roller wherein the liquid spreads to wet a surface which is exposed as the peeling of the element formation layer proceeds,
• wherein discharge due to peeling electrification in the step of further peeling is preventable by wetting the surface with the liquid.

A method for manufacturing a semiconductor device, comprising:

• forming a release layer over a substrate;
• forming an element formation layer including a semiconductor element over the release layer;
• providing a support base material over the element formation layer;
• forming a groove in the element formation layer with a laser beam in order to generate peeling inside the release layer;
• wetting a surface which is exposed by the generation of peeling with liquid;
• and
• further peeling the element formation layer from the substrate by winding the element formation layer and the support base material around a roller wherein the liquid spreads to wet a surface which is exposed as the peeling of the element formation layer proceeds,
• wherein discharge due to peeling electrification in the step of further peeling is preventable by wetting the surface with the liquid.

A method for manufacturing a semiconductor device, comprising:

• forming a release layer over a substrate;
• forming an element formation layer including a semiconductor element over the release layer;
• forming a groove in the element formation layer with a laser beam;
• providing a support base material over the element formation layer;
• and
• peeling the element formation layer from the substrate by applying mechanical force,
• wherein a surface which is exposed by the peeling is wetted with liquid during the peeling step,
• wherein the liquid spreads due to a capillary phenomenon, and
• wherein discharge due to peeling electrification in the step of peeling is preventable by wetting the surface with the liquid.