Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device

A method for manufacturing a semiconductor substrate, comprising:

• attaching a first substrate and a single crystal semiconductor substrate in which an embrittlement layer is formed at a predetermined depth, to each other with a first insulating film interposed between the first substrate and the single crystal semiconductor substrate;
• separating the single crystal semiconductor substrate and the first substrate from the embrittlement layer so that a first single crystal semiconductor layer is provided over the first substrate;
• removing a native oxide film from a surface of the first single crystal semiconductor layer before providing a second single crystal semiconductor layer;
• providing the second single crystal semiconductor layer over the first single crystal semiconductor layer by a vapor-phase epitaxial growth method;
• attaching the first substrate and a second substrate to each other with a second insulating film interposed therebetween so that the first single crystal semiconductor layer and the second single crystal semiconductor layer are provided between the first substrate and the second substrate;
• and
• separating the first substrate and the second substrate at an interface between the first single crystal semiconductor layer and the second single crystal semiconductor layer so that the first single crystal semiconductor layer is provided over the first substrate, and so that the second single crystal semiconductor layer is provided over the second substrate.

A method for manufacturing a semiconductor device, comprising:

• providing a single crystal semiconductor layer over a first substrate;
• providing a photoelectric conversion layer over the single crystal semiconductor layer by a vapor-phase epitaxial growth method;
• providing a first conductive layer over the photoelectric conversion layer;
• attaching the first substrate and a second substrate to each other with an insulating film interposed therebetween so that the single crystal semiconductor layer, the photoelectric conversion layer, and the first conductive layer are provided between the first substrate and the second substrate;
• separating the first substrate and the second substrate from each other at an interface between the single crystal semiconductor layer and the photoelectric conversion layer so that the single crystal semiconductor layer is provided over the first substrate, and so that the first conductive layer and the photoelectric conversion layer are provided over the second substrate;
• and
• providing a second conductive layer over the photoelectric conversion layer.

A method for manufacturing a semiconductor device, comprising:

• providing a first single crystal semiconductor layer over a first substrate;
• providing a photoelectric conversion layer by forming a second single crystal semiconductor layer having one conductivity type, a third single crystal semiconductor layer which is intrinsic, and a fourth single crystal semiconductor layer having an opposite conductivity type to the one conductivity type in this order over the first single crystal semiconductor layer by a vapor-phase epitaxial growth method;
• providing a first conductive layer over the photoelectric conversion layer;
• attaching the first substrate and a second substrate to each other with an insulating film interposed therebetween so that the first single crystal semiconductor layer, the photoelectric conversion layer, and the first conductive layer are provided between the first substrate and the second substrate;
• separating the first substrate and the second substrate from each other at an interface between the first single crystal semiconductor layer and the second single crystal semiconductor layer so that the first single crystal semiconductor layer is provided over the first substrate, and so that the first conductive layer and the photoelectric conversion layer are provided over the second substrate;
• and
• providing a second conductive layer over the photoelectric conversion layer.