Integration sequences with top surface profile modification
AssigneeApplied Materials, Inc.
InventorsChien-Teh Kao, Xinliang Lu, Zhenbin Ge, Mei Chang, Hoiman Raymond Hung, Nitin Ingle
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AssigneeApplied Materials, Inc.
InventorsChien-Teh Kao, Xinliang Lu, Zhenbin Ge, Mei Chang, Hoiman Raymond Hung, Nitin Ingle
Estimating the term…
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
A method for processing a substrate, comprising:
A method for processing a substrate, comprising:
A method for processing a substrate, comprising:
Dependencies are inferred from the claim text.