US 8,043,931 B1 · Methods for forming multi-layer silicon structures

Abstract

The embodiments of the present invention are directed to the formation of multi-layer silicon structures by forming and attaching a plurality of individual layers or structures where each of the layers or the structures comprises at least silicon forming a desired pattern. In some embodiments or some applications of some embodiments, at least one of the plurality of individual layers or the structures comprises a plurality of discrete silicon features that are combined together with at least one sacrificial material. In some embodiments or some applications of some embodiments, at least one of the plurality of individual layers or the structures comprises a plurality of discrete silicon features that are supported by a temporary substrate. Still in some embodiments or some applications of some embodiments, at least one of the plurality of individual layers or the structures needs to be machined after it is attached to a receiver such as a substrate or an another layer or structure. The present invention also discloses various fabrication methods for making required silicon layers or structures and attaching methods for forming multi-layer silicon structures.

Claims14

Dependent claims

A method for forming a multi-layer silicon structure, comprising:

(a) forming a plurality of individual layers,
wherein each of the plurality of individual layers comprises at least silicon wherein the at least silicon forms a pattern;
wherein at least one of the plurality of individual layers comprises a plurality of discrete silicon features wherein the discrete silicon features are held together with at least one sacrificial material and wherein at least a portion of the discrete silicon features is exposed on at least one surface of the at least one layer;
and
wherein a thickness of at least one of the plurality of individual layers is greater than a predetermined value;
(b) aligning the plurality of individual layers;
(c) attaching at least the plurality of individual layers together,
wherein at least a portion of the exposed portion of the discrete silicon features of the at least one layer comprising the discrete silicon features is attached to a receiver and wherein after the at least one layer that is thicker than the predetermined value is attached to a receiver, the thickness is reduced to the predetermined value;
and
(d) removing the at least one sacrificial material to release the discrete silicon features from the at least one sacrificial material after the step of (c).

7 more elements

Dependencies are inferred from the claim text.

Methods for forming multi-layer silicon structures

Life of this patent

Methods for forming multi-layer silicon structures

Life of this patent

Abstract

Claims14