Method of fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsTai-Ju Chen, Tung-Hsing Lee, Da-Kung Lo
Life of this patent
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Abstract
A method of fabricating a semiconductor device is provided. A gate structure is formed on a substrate and then a first spacer is formed at a sidewall of the gate structure. Next, recesses are respectively formed in the substrate at two sides of the first spacer. Thereafter, a buffer layer and a doped semiconductor compound layer are formed in each recess. An extra implantation region is respectively formed on the surfaces of each buffer layer and each doped semiconductor compound layer. Afterward, source/drain contact regions are formed in the substrate at two sides of the gate structure.
Claims18
A method of fabricating a semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming a source/drain extension region respectively in the substrate at two sides of the gate structure followed by forming a first spacer at a sidewall of the gate structure and forming a recess respectively in the substrate at two sides of the first spacer;
- forming a buffer layer and a doped semiconductor compound layer in each recess;
- forming an extra implantation region respectively on the exposed surfaces of the buffers layer and the doped semiconductor compound layers, wherein a depth in the substrate of the extra implantation region is less than a depth in the substrate of the corresponding doped semiconductor compound layer;
- and
- forming a source/drain contact region respectively in the substrate at two sides of the gate structure, wherein the extra implantation regions and the source/drain contact regions have dopants of the same conductivity type.
Dependencies are inferred from the claim text.