Method of forming trench-gate field effect transistors

A method of forming a shielded gate field effect transistor, comprising:

• forming trenches in a semiconductor region;
• forming a shield electrode in each trench, the shield electrode being insulated from the semiconductor region;
• performing angled sidewall implants of impurities of the first conductivity type to form channel enhancement regions adjacent each trench along opposing sidewalls of each trench;
• forming a body region of a second conductivity type in the semiconductor region;
• and
• forming source regions of the first conductivity type in the body region, each source region and an interface between the body region and the semiconductor region defining a channel region therebetween, the channel region extending along the corresponding trench sidewall,
• wherein each channel enhancement region partially extends into a lower portion of the corresponding channel region to thereby reduce a resistance of the channel region.