Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode
AssigneeThe Boeing Company
InventorBerinder P. S. Brar
Life of this patent
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Abstract
An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer, and a Schottky diode overlying the substrate and overlying the transistor collector layer. The Schottky diode includes a Schottky diode barrier layer structure that desirably is not of the same material, doping, and thickness as the transistor collector layer.
Claims17
A method for preparing an integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode, the method including the steps of
- providing a substrate;
- depositing the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer;
- and
- depositing the Schottky diode overlying the substrate and overlying the transistor collector layer;
- wherein the heterojunction bipolar transistor is formed by depositing:
- a transistor collector contact layer overlying and contacting the substrate,
- a transistor collector ohmic contact to the transistor collector contact layer,
- the transistor collector layer overlying and contacting the transistor collector contact layer,
- a transistor base layer overlying and contacting the transistor collector layer,
- a transistor base ohmic contact to the transistor base layer,
- a transistor emitter structure overlying and contacting the transistor base layer, and
- a transistor emitter ohmic contact overlying and contacting the transistor emitter structure;
- and
- wherein the Schottky diode is formed by depositing:
- an emitter layer overlying and contacting the transistor base layer,
- a diode contact layer overlying and contacting the emitter layer,
- a diode cathode ohmic contact to the diode contact layer,
- the Schottky diode barrier layer structure overlying and contacting the diode contact layer, and
- a diode anode contact to the Schottky diode barrier layer structure;
- and
- wherein the Schottky diode barrier layer structure is not formed of the same material as the transistor collector layer.
A method for preparing an integrated semiconductor structure, the method comprising the steps of:
- providing a substrate;
- depositing a transistor collector layer overlying and in contact with the substrate;
- depositing a Schottky diode barrier layer structure overlying the transistor collector layer;
- wherein the Schottky diode is formed by depositing:
- an emitter layer overlying and contacting the transistor base layer,
- a diode contact layer overlying and contacting the emitter layer,
- a diode cathode ohmic contact to the diode contact layer,
- the Schottky diode barrier layer structure overlying and contacting the diode contact layer, and
- a diode anode contact to the Schottky diode barrier layer structure;
- and
- wherein the Schottky diode barrier layer structure is not formed of the same material as the transistor collector layer.
Dependencies are inferred from the claim text.