Semiconductor device and method of fabricating the same

A method of manufacturing a semiconductor device comprising:

• forming a first amorphous semiconductor layer over a substrate;
• irradiating a first continuous wave laser beam to crystallize the first amorphous semiconductor layer to form a first crystalline semiconductor layer while moving an irradiated region by the first continuous wave laser beam relative to the substrate;
• patterning the first crystalline semiconductor layer to form at least one patterned first crystalline semiconductor layer;
• forming a second amorphous semiconductor layer on the patterned first crystalline semiconductor layer;
• patterning the second amorphous semiconductor layer to form at least one patterned second amorphous semiconductor layer having a first region overlapped with the patterned first crystalline semiconductor layer and a second region which is not overlapped with the patterned first crystalline semiconductor layer;
• and
• crystallizing the patterned second amorphous semiconductor layer by irradiating a second continuous wave laser beam to the second amorphous semiconductor layer while moving the second continuous wave laser beam relative to the substrate to form a second crystalline semiconductor layer,
• wherein in crystallizing the patterned second amorphous semiconductor layer, an irradiated region of the second continuous wave laser beam is moved from the first region to the second region.

A method of manufacturing a semiconductor device comprising:

• forming a first amorphous semiconductor layer over a substrate;
• patterning the first amorphous semiconductor layer to form at least one patterned first amorphous semiconductor layer;
• irradiating a first continuous wave laser beam to crystallize the patterned first amorphous semiconductor layer to form a patterned first crystalline semiconductor layer while moving an irradiated region by the first continuous wave laser beam relative to the substrate;
• forming a second amorphous semiconductor layer on the patterned first crystalline semiconductor layer;
• patterning the second amorphous semiconductor layer to form at least one patterned second amorphous semiconductor layer having a first region overlapped with the patterned first crystalline semiconductor layer and a second region which is not overlapped with the patterned first crystalline semiconductor layer;
• and
• crystallizing the patterned second amorphous semiconductor layer by irradiating a second continuous wave laser beam to the second amorphous semiconductor layer while moving the second continuous wave laser beam relative to the substrate to form a second crystalline semiconductor layer,
• wherein in crystallizing the patterned second amorphous semiconductor layer, an irradiated region of the second continuous wave laser beam is moved from the first region to the second region.

A method of manufacturing a semiconductor device comprising:

• forming a first amorphous semiconductor layer over a substrate;
• irradiating a first continuous wave laser beam to crystallize the first amorphous semiconductor layer to form a first crystalline semiconductor layer while moving an irradiated region by the first continuous wave laser beam relative to the substrate;
• patterning the first crystalline semiconductor layer to form at least one patterned first crystalline semiconductor layer;
• forming a second amorphous semiconductor layer thinner than the first amorphous semiconductor layer on the patterned first crystalline semiconductor layer;
• patterning the second amorphous semiconductor layer to form at least one patterned second amorphous semiconductor layer having a first region overlapped with the patterned first crystalline semiconductor layer and a second region which is not overlapped with the patterned first crystalline semiconductor layer;
• and
• crystallizing the patterned second amorphous semiconductor layer by irradiating a second continuous wave laser beam to the second amorphous semiconductor layer while moving the second continuous wave laser beam relative to the substrate to form a second crystalline semiconductor layer,
• wherein in crystallizing the patterned second amorphous semiconductor layer, an irradiated region of the second continuous wave laser beam is moved from the first region to the second region.