Holographic condition assessment system for a structure including a semiconductor material

A structure including a semiconductor material, the structure having a thickness, or a volume the structure comprising:

• at least one or more target portions, each test portion comprising a corresponding secondary portion, the target portion having at least one or more first features when at least one of the following occurs:
• an external force, or the effects thereof, is received by the second portion of the structure and an internal condition occurs in the target portion;
• at least one or more test conditions, or the effects of the test conditions, each test condition shaped and determined by a plurality of electronically stored interferometric images, the test condition determined to test stress and circuit characteristics within the semiconductor or free-metal or an electro optic material or in a material having combination thereof occurring in the first feature of the target portion;
• at least one or more first holograms, interferograms, holographic optical elements, free-carrier holograms, isochromatic holograms, phase-conjugate holograms, four-wave mixing phase holograms, or embossed holograms;
• and a plurality of stored electronic interferometric images of the target portion to determine and shape the elements which comprise the holograms, interferograms, holographic optical elements, free-carrier holograms, isochromatic holograms, phase-conjugate holograms, four-wave mixing phase holograms, or embossed holograms;
• and, which comprise the elements of the secondary hologram, interferogram, holographic optical elements, free-carrier holograms, isochromatic holograms, phase-conjugate holograms, four-wave mixing phase holograms, or embossed holograms;
• each optical element or optical format being arranged and spaced apart through the thickness of the structure from the first or primary grating, the first or primary hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed holograms and the plurality of one or more secondary hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four wave-mixing phase hologram, or embossed holograms, a secondary hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed hologram, each optical element being shaped and located to produce a first optical interference pattern when the target portion and the hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, embossed hologram is exposed to non-invasive illumination and when the target portion has the first feature or the effects of the stress or stresses under test thereof.

A system comprising:

• a structure comprising including a semiconductor material, the structure including at least one or more target portions, each with a corresponding secondary portion, the target portion having a first feature when at least one of the following occurs:
• an external force, or effects thereof, or a specific photo-carrier is received by the second portion of the structure and the at least one or more internal condition occurs in the target portion;
• at least one or more test condition, each test condition determined and arranged to test stress, and the effects thereof and circuit characteristics within the semiconductor or free-metal or electro-optic material occurring in the first feature of the target portion;
• and
• at least one or more hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed holograms positioned apart from the structure, and arranged by wavelength the plurality of gratings shaped and located to produce a primary optical interference pattern having one or more wavelengths, or one or more polarizations, a phase, an amplitude, a birefringence, a volume, a phase-conjugate, or a combination thereof are present as determined test conditions when the target portion and the hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed hologram is exposed to non-invasive illumination and when the target portion has the corresponding first feature.

A system comprising:

• a structure including a semiconductor material, the structure including a target portion, a second portion, and a first hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed holograms, the target portion having a first feature when at least one of the following occurs:
• an external force or the effects thereof is received by the second portion of the structure and an internal condition or the effects thereof occurs in the target portion;
• a test condition, the test condition determined to test stress, and the effects thereof, and circuit characteristics within the semiconductor or free-metal material occurring in the first feature of the target portion;
• and
• a second hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed holograms positioned apart from the structure, the first hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate, four-wave mixing phase hologram, or embossed hologram and the secondary hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed holograms shaped and located to produce a first optical interference pattern when the target portion and the hologram, interferogram, holographic optical element, free-carrier hologram, isochromatic hologram, phase-conjugate hologram, four-wave mixing phase hologram, or embossed hologram is exposed to non-invasive illumination and when the target portion has the first feature.