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US 8,039,970 B2Granted
Stacked semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKazuhiro Yamamori, Katsuhiro Ishida
Life of this patent
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Abstract
A stacked semiconductor device includes a first semiconductor element mounted on a circuit substrate and a second semiconductor element stacked on the first semiconductor element via a spacer layer. An electrode pad of the first semiconductor element is electrically connected to a connection portion of the circuit substrate through a first metal wire. A vicinity of the end portion of the first metal wire connected to the electrode pad is in contact with an insulating protection film which covers the surface of the first semiconductor element.
Claims19
A stacked semiconductor device, comprising:
- a circuit substrate having an element mounting section and a connection portion;
- a first semiconductor element, mounted on the element mounting section of the circuit substrate, including a first semiconductor element body having a circuit with a transistor, a first electrode pad disposed on a surface of the first semiconductor element body, a metal bump formed on the first electrode pad and an insulating protection film formed on the surface of the first semiconductor element body, on which the first electrode pad is disposed, to cover the surface containing a periphery of the first electrode pad while exposing the first electrode pad;
- a second semiconductor element, stacked on the first semiconductor element so as to cover the first electrode pad, including a second semiconductor element body and a second electrode pad disposed on a surface of the second semiconductor element body, the second semiconductor element being disposed on the first semiconductor element via a spacer layer;
- and
- a first metal wire electrically connecting the connection portion of the circuit substrate and the first electrode pad of the first semiconductor element,
- wherein a first end portion of the first metal wire is ball-connected to the connection portion of the circuit substrate, a second end portion of the first metal wire is connected to the metal bump formed on the first electrode pad, and the first metal wire is in contact with the insulating protection film located around the first electrode pad on the surface of the first semiconductor element body.
3 more elements
A stacked semiconductor device, comprising:
- a circuit substrate having an element mounting section and a connection portion;
- a first semiconductor element, mounted on the element mounting section of the circuit substrate, including a first semiconductor element body having a circuit with a transistor, a first electrode pad disposed on a surface of the first semiconductor element body and an insulating protection film formed on the surface of the first semiconductor element body, on which the first electrode pad is disposed, to cover the surface containing a periphery of the first electrode pad while exposing the first electrode pad;
- a second semiconductor element, stacked on the first semiconductor element so as to cover the first electrode pad, including a second semiconductor element body and a second electrode pad disposed on a surface of the second semiconductor element body, the second semiconductor element being disposed on the first semiconductor element via a spacer layer;
- and
- a first metal wire electrically connecting the connection portion of the circuit substrate and the first electrode pad of the first semiconductor element,
- wherein a first end portion of the first metal wire is ball-connected to the first electrode pad of the first semiconductor element, a second end portion of the first metal wire is connected to the connection portion of the circuit substrate, and the first metal wire is in contact with the insulating protection film located around the first electrode pad on the surface of the first semiconductor element body.
3 more elements
Dependencies are inferred from the claim text.