Semiconductor light-emitting element and method of producing the same
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorTakeru Amano
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 μm. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.
Claims3
A method of producing a semiconductor light-emitting element, comprising:
- forming a first layer of GaAs layer on a semiconductor substrate having Ga by providing As2;
- forming a second layer of InAs thin film layer having a plurality of InAs quantum dots on the first layer of GaAs layer by providing In and As2 at a growth temperature from 540° C. to 580° C.;
- forming a third layer of InGaAs layer on the second layer of InAs thin film layer having the plurality of InAs quantum dots by providing In, Ga and As2;
- and
- forming a fourth layer of GaAs layer on the third layer of InGaAs layer by providing Ga and As2, wherein,
- an InGaAs layer having a high In content is formed at an interface between the InAs quantum dots and the third layer of InGaAs layer, and
- the amount of In contained in the InGaAs layer is gradually decreased in a direction away from the interface.
Dependencies are inferred from the claim text.