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AssigneeTosoh SMD, Inc.
InventorsRobert S. Bailey, Melvin K. Holcomb, David B. Smathers, Timothy Wiemels
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A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.
In a method of making a generally pot shaped sputter target having a first sputtering region defining a planar end wall or dome and a second sputtering region defining a sidewall connected to and extending from said first sputtering region to form an open end of said sputter target, the method of forming different crystallographic orientations in said first and second sputtering regions, the method comprising:
A method of forming a sputter target assembly having first and second sputtering surfaces with said first sputtering surface having a first crystallographic orientation and said second sputtering surface having a second crystallographic orientation that is different than said first crystallographic orientation, said method comprising:
Dependencies are inferred from the claim text.