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US 8,037,593 B2Granted
Method for manufacturing an ultra narrow gap magnetoresistive sensor
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsKuok San Ho, Ying Hong, Wipul Pemsiri Jayasekara, Daniele Mauri
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Abstract
A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.
Claims11
A method for manufacturing a magnetoresistive sensor, comprising:
- providing a substrate;
- depositing a plurality of sensor layers over the substrate, the plurality of sensor layers including a capping layer structure formed at the top of the plurality of sensor layers, the capping layer including a layer of Ru and a layer of Ta formed over the layer of Ru;
- performing an annealing process;
- after performing the annealing process, performing an ion milling to remove all of the layer of Ta;
- and
- after performing the ion milling to remove all of the layer of Ta, defining a sensor structure from the plurality of sensor layers.
3 more elements
Dependencies are inferred from the claim text.