Surface emitting semiconductor laser and method for fabricating the same

A method for fabricating a surface emitting semiconductor laser comprising:

• forming a first semiconductor multilayer reflection mirror of a first conduction type that is formed on a substrate and includes pairs of semiconductor layers having different Al compositions;
• forming an active region formed on the first semiconductor multilayer reflection mirror;
• forming a second semiconductor multilayer reflection mirror of a second conduction type opposite to the first conduction type, the second semiconductor multilayer reflection mirror being formed on the active region and including pairs of semiconductor layers having different Al compositions;
• forming a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region, the first selectively oxidized layer including AlAs;
• and
• forming a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region, the second selectively oxidized layer including AlAs,
• a first semiconductor layer next to the first selectively oxidized layer having an Al composition greater than that of a second, semiconductor layer next to the second selectively oxidized layer, and
• the first conductive region having a size smaller than that of the second conductive region,
• wherein a total thickness of the first selectively oxidized layer and the first semiconductor layer is equal to λ/4n where λ is an oscillation wavelength, and n is a refractive index of a medium, and a total thickness of the second selectively oxidized layer and the second semiconductor layer is equal to λ/4n, and the first selectively oxidized layer and the second selectively oxidized layer have an identical thickness, which is equal to or less than 50 nm.

An optical semiconductor device comprising;

• a surface emitting semiconductor laser;
• and
• an optical system coupled with the surface emitting semiconductor laser,
• the surface emitting semiconductor laser including:
• a substrate;
• a first semiconductor multilayer reflection mirror of a first conduction type that is formed on the substrate and includes pairs of semiconductor layers having different Al compositions;
• an active region formed on the first semiconductor multilayer reflection mirror;
• a second semiconductor multilayer reflection mirror of a second conduction type opposite to the first conduction type, the second semiconductor multilayer reflection mirror being formed on the active region and including pairs of semiconductor layers having different Al compositions;
• a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region, the first selectively oxidized layer including AlAs;
• and
• a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region, the second selectively oxidized layer including AlAs,
• a first semiconductor layer next to the first selectively oxidized layer having an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, and
• the first conductive region having a size smaller than that of the second conductive region,
• wherein a total thickness of the first selectively oxidized layer and the first semiconductor layer is equal to λ/4n where is an oscillation wavelength, and n is a refractive index of a medium, and a total thickness of the second selectively oxidized layer and the second semiconductor layer is equal to λ/4n, and the first selectively oxidized layer and the second selectively oxidized layer have an identical thickness, which is equal to or less than 50 nm.