Semiconductor package with reduced inductive coupling between adjacent bondwire arrays

A Doherty power amplifier semiconductor package comprising:

• a carrier amplifier having a first transistor, a first capacitor, and a first bondwire array of first wires interconnecting said first transistor with said first capacitor;
• a peaking amplifier adjacent to carrier amplifier, said peaking amplifier having a second transistor, a second capacitor, and a second bondwire array of second wires interconnecting said second transistor with said second capacitor, said second bondwire array being proximate to said first bondwire array, said first bondwire array including a first inner wire of said first wires, said first inner wire being closer to said second bondwire array than remaining ones of said first wires, said second bondwire array including a second inner wire of said second wires, said second inner wire being closer to said first bondwire array than remaining ones of said second wires;
• a first ground wire positioned proximate said first inner wire and substantially aligned with said first inner wire;
• and
• a second ground wire positioned proximate said second inner wire and substantially aligned with said second inner wire, said first and second ground wires being located between said first and second bondwire arrays, said first and second ground wires being coupled to a ground region.

A semiconductor package comprising:

• a first circuit having a first electrical device, a second electrical device, and a first bondwire array interconnecting said first electrical device with said second electrical device;
• a second circuit adjacent to said first circuit, said second circuit having a third electrical device, a fourth electrical device, and a second bondwire array interconnecting said third electrical device with said fourth electrical device, said second bondwire array being proximate to said first bondwire array with first wires of said first bondwire array being arranged substantially aligned with second wires of said second bondwire array, said first bondwire array including a first inner wire of said first wires, said first inner wire being closer to said second bondwire array than remaining ones of said first wires, said second bondwire array including a second inner wire of said second wires, said second inner wire being closer to said first bondwire array than remaining ones of said second wires;
• a first ground wire positioned proximate said first inner wire, each of said first wires of said first bondwire array and said first ground wire exhibiting a first substantially common profile;
• and
• a second ground wire positioned proximate said second inner wire, each of said second wires of said second bondwire array and said second ground wire exhibiting a second substantially common profile, said first and second ground wires being located between said first and second bondwire arrays, and said first and second ground wires being coupled to a ground region.