Layer having functionality, method for forming flexible substrate having the same, and method for manufacturing semiconductor device

A method for forming a layer having functionality, comprising the steps of:

• forming a peeling layer in which oxygen and silicon are combined and an inactive group is combined with the silicon over a substrate;
• forming a layer having functionality over the peeling layer;
• and
• peeling the layer having functionality from the substrate at a portion including the peeling layer or at a boundary between the peeling layer and the layer having functionality.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a peeling layer comprising a silane coupling agent over a substrate;
• forming a conductive layer over the peeling layer;
• forming an insulating layer covering the conductive layer;
• peeling the conductive layer and the insulating layer from the substrate;
• and
• electrically connecting the conductive layer and a connection terminal of an integrated circuit.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a peeling layer in which oxygen and silicon are combined and an inactive group is combined with the silicon over a substrate;
• forming a conductive layer over the peeling layer;
• forming an insulating layer covering the conductive layer;
• peeling the conductive layer and the insulating layer from the substrate at a portion including the peeling layer or at a boundary between the peeling layer and the conductive layer;
• and
• connecting the conductive layer and a connection terminal of an integrated circuit electrically with each other.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a peeling layer comprising a silane coupling agent over a first substrate;
• forming a colored layer over the peeling layer;
• forming an insulating layer covering the colored layer;
• forming a conductive layer over the insulating layer;
• forming an orientation film over the conductive layer;
• peeling the colored layer, the insulating layer, the conductive layer and the orientation film from the first substrate;
• attaching a second substrate to the colored layer, the insulating layer and the conductive layer;
• forming a sealant over the second substrate;
• coating a region surrounded by the sealant with a liquid crystal material;
• and
• attaching the second substrate and an active matrix substrate with the sealant.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a peeling layer in which oxygen and silicon are combined and an inactive group is combined with the silicon over a first substrate;
• forming a colored layer over the peeling layer;
• forming an insulating layer covering the colored layer;
• forming a conductive layer over the insulating layer;
• forming an orientation film over the conductive layer;
• peeling the colored layer, the insulating layer, the conductive layer and the orientation film from the first substrate at a portion including the peeling layer or at a boundary between the peeling layer and the colored layer;
• attaching a second substrate to the colored layer, the insulating layer and the conductive layer;
• forming a sealant over the second substrate;
• coating a region surrounded by the sealant with a liquid crystal material;
• and
• attaching the second substrate and an active matrix substrate with the sealant.