Method of predicting substrate current in high voltage device
AssigneeDongbu HiTek Co., Ltd.
InventorSang-Hun Kwak
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Abstract
A method of predicting a substrate current in a high voltage device that may accurately predict substrate current components in each of a first region, a second region, and a third region. This may be accomplished by modeling a substrate current component in a third region, in which an inconsistency may occur when a substrate current in a high voltage device is calculated, for example using BSIM3-based modeling. According to embodiments, a substrate current for a third region may be modeled by an expression with a ternary operator, and the modeled substrate current may be added to a substrate current obtained through BSIM3-based modeling.
Claims7
A method to utilize a computer to predict a substrate current in a device, comprising:
- determining whether a drain voltage of the device is equal to or higher than a prescribed first critical value;
- and then
- setting an additional substrate current of the device to zero if the drain voltage is lower than the first critical value;
- and then
- determining whether a gate voltage of the device is equal to or higher than a prescribed second critical value if the drain voltage is equal to or higher than the first critical value;
- and then
- setting the additional substrate current to zero if the gate voltage is lower than the second critical value;
- and then
- setting, by using the computer, the additional substrate current to a value obtained by multiplying a second power of a difference between the second critical value and the gate voltage, the drain voltage, and a proportional constant if the gate voltage is equal to or greater than the second critical value;
- and then
- adding the additional substrate current to a substrate current of the device obtained through MOSFET device modeling,
- wherein the first critical value is set to the drain voltage when a change in the substrate current appears, depending on the gate voltage, and
- wherein the second critical value is set to the gate voltage when a decreasing substrate current starts to increase.
Dependencies are inferred from the claim text.