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US 8,027,746 B2Granted
Atomic layer deposition apparatus
AssigneeApplied Materials, Inc.
InventorsBarry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
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Abstract
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
Claims15
A method of depositing a material layer on a substrate comprising:
- (a) positioning a substrate on a wafer support in a deposition chamber comprising a first deposition region and a second deposition region, wherein the first and second deposition regions are integrally connected to one another, and wherein the wafer support is movable between the first and second deposition regions;
- (b) pulsing a first deposition gas into the first deposition region and pulsing a second deposition gas into the second deposition region;
- (c) moving the wafer support with the substrate thereon into the first deposition region wherein a first monolayer of the first deposition gas is chemisorbed onto the surface of the substrate;
- (d) moving the wafer support with the substrate thereon into the second deposition region wherein a first monolayer of the second deposition gas is chemisorbed on the first monolayer of the first deposition gas;
- and
- (e) repeating steps (c) and (d) until a material layer having a desired thickness is achieved.
3 more elements
A method of depositing a material layer on a substrate comprising:
- exposing a substrate positioned in a first deposition region of a deposition chamber to a first deposition gas, a first monolayer of the first deposition gas is chemisorbed onto the surface of the substrate;
- moving the substrate having the first monolayer chemisorbed thereon from the first deposition region to a second deposition region of the deposition chamber;
- and
- exposing the substrate positioned in the second deposition region of the deposition chamber to a second deposition gas, wherein a first monolayer of the second deposition gas is chemisorbed on the first monolayer of the first deposition gas, wherein the first and second deposition gases are pulsed into the deposition chamber while flowing an inert gas between the first and second deposition regions.
1 more element
Dependencies are inferred from the claim text.