Method for analyzing defect data and inspection apparatus and review system
AssigneesHitachi, Ltd., Hitachi High-Technologies Corporation
InventorsHisae Shibuya, Yuji Takagi
Life of this patent
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Abstract
The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
Claims12
A method of analyzing defect data using partial inspection of a wafer using a processor to perform the following steps:
- generating a wafer map using information of positions of defects detected by an inspection apparatus;
- grouping defects on said wafer map;
- generating a plurality of geometric patterns including regions to be inspected and non-inspection regions by using non-inspection area information based on an inspection condition of the wafer;
- calculating degree of coincidence between said grouped defects and said regions to be inspected in said generated geometric patterns using said non-inspection regions as a mask;
- and
- classifying said grouped defects into one of said generated geometric patterns by using the result of said calculating.
An apparatus for analyzing defect data using partial inspection of a wafer, comprising:
- a wafer map generator which generates a wafer map using information of positions of defects detected by an inspection apparatus;
- a first processor which groups defects on said wafer map;
- a generator which generates a plurality of geometric patterns including regions to be inspected and non-inspection regions by using non-inspection area information based on an inspection condition of the wafer;
- predetermined parameter of an image region of said grouped defects;
- a calculator which calculates a degree of coincidence between said grouped defects and said regions to be inspected in said generated geometric patterns using said non-inspection regions as a mask;
- and
- a second processor which classifies said grouped defects into one of said generated geometric patterns by using the result of said calculating.
Dependencies are inferred from the claim text.