Semiconductor device
AssigneeSony Corporation
InventorsYuji Masui, Takahiro Arakida, Kayoko Kikuchi, Terukazu Naruse, Tomoyuki Oki, Naoki Jogan
Life of this patent
Estimating the term…
Abstract
The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.
Claims7
A semiconductor device comprising, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side, further comprising:
- a resonator structure including a first multilayer reflector, an active layer, and a second multilayer reflector in order from the semiconductor layer side on the semiconductor layer and in a region different from the adhesion layer;
- and
- an electrode electrically connected to the second multilayer reflector on the low-dielectric-constant material layer,
- wherein the adhesion layer has a projection and recess structure, and
- the low-dielectric-constant material layer is formed so as to bury gaps in the projection and recess structure.
Dependencies are inferred from the claim text.