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US 8,027,205 B2Granted
Semiconductor memory device and operation method thereof
AssigneeHynix Semiconductor Inc.
InventorByeong-Chan Choi
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Abstract
A semiconductor memory device includes a strobe signal generator for receiving a write command and generating a write strobe signal that defines an activation period variably according to an operation frequency, and a data transfer unit for transferring data from an external device to an internal data line in response to the write strobe signal.
Claims19
A semiconductor memory device, comprising:
- a strobe signal generator configured to receive a write command, generate a control signal for controlling an activation of a write strobe signal in response to an operation frequency of the semiconductor memory device, and to generate the write strobe signal that defines an activation period variably based on the operation frequency in response to the write command and the control signal;
- and
- a data transfer unit configured to transfer data from an external device to an internal data line in response to the write strobe signal.
A method of driving a semiconductor memory device, comprising:
- activating a write strobe signal in response to a write command;
- generating a control signal for controlling an activation period of the write strobe signal in response to an operation frequency;
- outputting the write strobe signal in response to the write command and the control signal;
- and
- transferring data from an external device to an internal data line in response to the write strobe signal.
2 more elements
Dependencies are inferred from the claim text.