Method of programming a flash memory device using self boosting
AssigneeHynix Semiconductor Inc.
InventorMin Kyu Lee
Life of this patent
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Abstract
A method of programming a flash memory device controls a channel boosting level to ensure device properties. The flash memory device is programmed in an Incremental Step Pulse Program (ISPP) manner by applying a program voltage to a selected memory cell and a pass voltage to unselected memory cells. The programming is performed by varying the pass voltage so that a gap of a predetermined range is maintained between a channel voltage and a word line voltage of the unselected memory cell.
Claims19
A method of programming a flash memory device using incremental step pulse programming (ISPP), the method comprising:
- applying a program voltage to a selected memory cell;
- and
- applying a pass voltage to unselected memory cells,
- wherein the pass voltage is increased to the unselected memory cells in response to the program voltage during a program loop of the ISPP to maintain a gap of a predetermined range between a channel voltage and a word line voltage of the unselected memory cell.
A method of programming a flash memory device, the method comprising:
- programming a selected memory cell by applying a program voltage to the selected memory cell and a pass voltage to unselected memory cells;
- verifying the selected memory cell;
- determining whether the level of the program voltage is higher than a first voltage, when the programming is not passed;
- and
- repeating the programming and verifying the selected memory cell by applying the program voltage gradually increased by a first step voltage to the selected memory cell and the pass voltage increased by a second step voltage to the unselected memory cells, respectively, until the programming is passed, when the program voltage is higher than the first voltage.
A method of programming a flash memory device, the method comprising:
- programming a selected memory cell by applying a program voltage to the selected memory cell and a pass voltage to unselected memory cells;
- verifying the selected memory cell;
- determining whether the number of program loop is more than a first number;
- and
- repeating the programming and verifying the selected memory cell by applying the program voltage gradually increased by a first step voltage to the selected memory cell and the pass voltage increased by a second step voltage to the unselected memory cells, respectively, until the programming is passed when the number of the program loop is more than the first number.
Dependencies are inferred from the claim text.