Semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSoon Wook Hwang, Ki Tae Park, Yeong Taek Lee
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Abstract
An electrically erasable programmable non-volatile semiconductor memory device. The semiconductor memory device includes a memory cell array comprising a plurality of memory blocks, each memory block comprising a plurality of memory cells, a dummy memory cell, and a select gate transistor. Transfer transistors each having a current path connected between a corresponding wordline enable signal line and a corresponding wordline are controlled by an output of a block selection circuit. The transfer transistors include a dummy transfer transistor electrically coupled to the dummy memory cell, and configured to transmit a dummy wordline enable signal.
Claims8
A semiconductor memory device comprising:
- a transfer transistor unit including a plurality of transistors each of which transmits a control signal to a corresponding line;
- and
- a memory cell array including a plurality of memory strings each of which includes a first selection transistor, a first dummy cell, a plurality of memory cells, which are connected in series,
- wherein the plurality of transistors comprises a first transfer transistor coupled to the first selection transistor through the corresponding line, a first dummy transfer transistor coupled to the first dummy cell through the corresponding line and, and a plurality of cell transfer transistors coupled to the plurality of memory cells through the corresponding lines respectively,
- wherein the first transfer transistor, the first dummy transfer transistor and at least one of the plurality of cell transfer transistors are arranged in order toward the memory cell array.
Dependencies are inferred from the claim text.