Nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSunil Shim, Sunghoi Hur, Younggoan Jang, Jinho Kim, Su-Youn Yi, HuiChang Moon
Life of this patent
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Abstract
A nonvolatile memory device having a three-dimensional structure includes first word line stacks in which first word lines are stacked; second word line stacks in which second word lines parallel to the first word lines are stacked; first connection lines connecting the first word lines; and second connection lines connecting the second word lines. Each of the first connection lines connects the first word lines located at a common layer, each of the second connection lines connects the second word lines located at a common layer and at least one second word line stack is disposed between a pair of the first word line stacks.
Claims18
A nonvolatile memory device comprising:
- a plurality of first word line stacks in which first word lines are stacked;
- a plurality of second word line stacks in which second word lines parallel to the first word lines are stacked;
- a plurality of first connection lines connecting the first word lines;
- a plurality of second connection lines connecting the second word lines;
- channel semiconductor patterns formed on one sidewall of each of the first and second word line stacks;
- and
- a charge storage layer formed between one sidewall of each of the first and second word line stacks and the channel semiconductor patterns,
- wherein each of the first connection lines connects the first word lines located at a common first word line layer, wherein each of the second connection lines connects the second word lines located at a common second word line layer and wherein at least one second word line stack is disposed between a pair of the first word line stacks.
A nonvolatile memory device comprising:
- a plurality of first word line stacks in which first word lines are stacked;
- a plurality of second word line stacks in which second word lines parallel to the first word lines are stacked;
- a plurality of first connection lines connecting the first word lines;
- and
- a plurality of second connection lines connecting the second word lines,
- wherein each of the first connection lines connects the first word lines located at a common first word line layer, wherein each of the second connection lines connects the second word lines located at a common second word line layer and wherein at least one second word line stack is disposed between a pair of the first word line stacks,
- wherein each of the first and second connection lines is formed on the same layer as the first and second word lines, and
- wherein the first and second connection lines are disposed on both sides of the first and second word lines.
A nonvolatile memory device comprising:
- a plurality of first word line stacks in which first word lines are stacked;
- a plurality of second word line stacks in which second word lines parallel to the first word lines are stacked;
- a plurality of first connection lines connecting the first word lines;
- and
- a plurality of second connection lines connecting the second word lines,
- wherein each of the first connection lines connects the first word lines located at a common first word line layer, wherein each of the second connection lines connects the second word lines located at a common second word line layer and wherein at least one second word line stack is disposed between a pair of the first word line stacks, and
- wherein each of the first and second connection lines is formed on a layer different from the first and second word lines.
Dependencies are inferred from the claim text.