Nonvolatile memory device
AssigneeHynix Semiconductor Inc.
InventorsTae-Hun Yoon, Hyuck-Soo Yoon
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Abstract
A nonvolatile memory device includes a plurality of programming current driving units configured to supply memory cells with a programming current corresponding to a write data, a common programming current controlling unit configured to generate a common control voltage for controlling the programming current and a switching unit configured to transfer the common control voltage to the programming current driving unit selected among the plurality of programming current driving units by a plurality of driving selection signals.
Claims11
A nonvolatile memory device, comprising:
- a plurality of programming current driving units configured to supply memory cells with a programming current corresponding to a write data;
- a common programming current controlling unit configured to generate a common control voltage for controlling the programming current;
- and
- a switching unit configured to transfer the common control voltage to the programming current driving unit selected among the plurality of programming current driving units by a plurality of driving selection signals.
A nonvolatile memory device, comprising:
- a plurality of programming current driving units configured to supply memory cells with a programming current corresponding to a write data;
- a common programming current controlling unit configured to generate a common control voltage for controlling the programming current;
- a switching unit configured to transfer the common control voltage to the programming current driving unit selected among the plurality of programming current driving units by a plurality of driving selection signals;
- and
- a driving selection signal generating unit configured to generate the plurality of driving selection signals for selecting the programming current driving unit to be enabled according to a write address and a write verification result.
Dependencies are inferred from the claim text.