Programming a phase change memory
AssigneeIntel Corporation
InventorsRavi P. Gutala, Ferdinando Bedeschi, Johnny Javanifard
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Abstract
A programming circuit of a phase change memory cell includes a controllable current generator to supply a programming pulse and an internal control unit coupled to the controllable current generator for stepwise modifying the programming pulse. The internal control unit, in turn, includes a control signal generator to provide the controllable current generator with a plurality of control signals. An oscillator provides a time reference signal and a driving module drives the control signal generator based on the time reference signal. As a result, a programming pulse with stepwise adjustable slope can be produced, including such a pulse with different leading and trailing edges.
Claims14
A phase change memory comprising:
- a plurality of phase change memory cells;
- and
- a controllable programming current generator to set the leading edge and the trailing edge of a set pulse at different slopes.
Dependencies are inferred from the claim text.