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US 8,026,788 B2Granted
Thin-film resistor with a layer structure and method for manufacturing a thin-film resistor with a layer structure
AssigneesFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Universitaet Duisburg—Essen Forsthausweg
InventorsHeinz Deiters, Susanne Linnenberg, Dirk Nachrodt, Uwe Paschen, Holger Vogt
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Abstract
A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.
Claims6
A thin-film resistor, comprising:
- a first metal contact;
- a second metal contact;
- and
- a thin-film resistor layer structure arranged to extend between the first metal contact and the second metal contact, the thin-film resistor layer structure including:
- a Ti layer;
- and
- a TiN layer;
- wherein
- a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.
6 more elements
A method for manufacturing a thin-film resistor, comprising:
- forming a thin-film resistor layer structure including a Ti layer and a TiN layer;
- and
- forming a first metal contact and a second metal contact such that the thin-film resistor layer structure extends between the first metal contact and the second metal contact;
- wherein
- a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.
2 more elements
Dependencies are inferred from the claim text.