Low latency flop circuit

A flop circuit comprising:

• a first stage including:
• a precharge circuit configured to precharge a first node to a first logic level during a first phase of a clock signal;
• a discharge circuit configured to, when both the clock signal and a delayed clock signal are in respective second phases, discharge the first node to a second logic level if the data input signal is at the first logic level;
• and
• a second stage including a capture circuit and an output circuit, wherein the output circuit includes a first terminal coupled receive a first signal from the first node, wherein the capture circuit is configured to capture and store a logic value indicative of the first signal, and wherein the output circuit is configured to provide an output signal depending on the captured logic value, wherein the capture circuit is coupled to receive the first signal through a passgate and is configured to capture the logic value indicative of the first signal during the second phase of the clock signal, and wherein the output circuit includes a NAND gate having a first input coupled to the first node and a second input coupled to receive the logic value indicative of the first signal from the capture circuit.

An integrated circuit comprising:

• a functional unit configured to perform one or more logical functions of the integrated circuit, wherein the functional unit includes a plurality of flop circuits configured to store data associated with the logical functions, wherein each of the flop circuits includes:
• a precharge circuit configured to precharge a first node in response to an occurrence of a first phase of a timing signal;
• a discharge circuit configured to conditionally discharge the first node in response to an occurrence of a second phase of the timing signal depending upon a data input signal;
• a voltage retention circuit configured to store a retained logic value that depends upon a logic value present at the first node during at least a portion of the second phase of the timing signal, wherein the voltage retention circuit includes a latch circuit and a delay circuit coupled between the first node and an input of the latch circuit;
• and
• an output circuit configured to generate an output signal that depends upon the data input signal, wherein the output circuit is configured to drive the output signal in a first logic state when the first node is discharged regardless of the retained logic value, and wherein the output circuit is configured to drive the output signal in a logic state that depends upon the retained logic value when the first node is charged, wherein the output circuit includes a NAND gate having a first input coupled to the first node and a second input coupled to receive the retained logic value from the voltage retention circuit.

A data storage circuit comprising:

• a precharge transistor coupled between a first voltage supply node and a first node, wherein the precharge transistor is configured to precharge the first node during a first phase of a clock signal;
• a discharge circuit coupled between the first node and a second voltage supply node, wherein the discharge circuit includes a first NMOS transistor having a gate coupled to receive a clock signal, a second NMOS transistor having a gate coupled to receive a data input signal, and a third NMOS transistor having a gate coupled to receive a delayed clock signal;
• a latch circuit coupled to receive and store a logic value that is dependent on a voltage at the first node during a second phase of the clock signal;
• and
• a NAND gate having a first input coupled to the first node and a second input coupled to receive the stored logic value of the latch circuit.