Thermal designs of packaged gallium nitride material devices and methods of packaging
AssigneeInternational Rectifier Corporation
InventorsSameer Singhal, Andrew Edwards, Chul H. Park, Quinn Martin, Isik C. Kizilyalli
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Abstract
Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
Claims16
A packaged gallium nitride material device comprising:
- a package having a bowed convex shape;
- and
- a gallium nitride material device comprising at least one transistor structure including a gallium nitride material region and source, gate and drain electrodes, the gallium nitride material device having a total gate width of at least 36 mm;
- the gallium nitride material device being supported by the package;
- wherein the packaged device is configured to have a total thermal resistance of less than 1.5° C./W.
A packaged gallium nitride material device comprising:
- a package having a bowed convex shape;
- and
- a gallium nitride material device comprising at least one transistor structure including a gallium nitride material region and source, gate and drain electrodes, the gallium nitride material device having a total gate width of at least 10 mm;
- the gallium nitride material device being supported by the package;
- wherein the packaged device is configured to have a total thermal resistance of less than 4.0° C./W.
A packaged gallium nitride material device comprising:
- a package including a supporting portion consisting essentially of copper;
- and
- a gallium nitride material device comprising at least one transistor structure including an active region formed in a gallium nitride material region over a substrate, said substrate being .directly on said supporting portion of said package;
- wherein the gallium nitride material device is supported by and electrically insulated from the supporting portion of the package.
A method of packaging a gallium nitride material device, comprising:
- forming a gallium nitride material device comprising at least one transistor structure including a gallium nitride material region over a substrate;
- and
- attaching the substrate to a pre-bowed copper material package.
Dependencies are inferred from the claim text.