Through-silicon via structures including conductive protective layers
AssigneeSamsung Electronics Co., Ltd.
InventorsMinseung Yoon, Namseog Kim, Pyoungwan Kim, Keumhee Ma, Chajea Jo
Life of this patent
Estimating the term…
Abstract
Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.
Claims18
A Through-Silicon-Via (TSV) structure comprising:
- a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface;
- a conductive protective layer comprising Nickel (Ni) and/or Cobalt (Co) at a bottom of the conductive via;
- a polymer insulating layer on the backside surface of the substrate in contact with the conductive protective layer;
- wherein an outer surface of the polymer insulating layer has an inclined profile proximate to where a protruding portion of the conductive via protrudes from the backside surface of the substrate and contacts the polymer insulating layer;
- and
- wherein the polymer insulating layer has a viscosity comprising about 290 cP, a resistivity of about 1010 ohm-cm, and a modulus of about 1 GPa to about 3 GPa.
A Through-Silicon-Via (TSV) structure comprising:
- a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, the conductive via being free of a groove to provide a planar upper surface of the conductive via;
- a conductive protective layer comprising Nickel and/or Cobalt at a bottom of the conductive via;
- and
- a polymer insulating layer on the backside surface of the substrate in contact with the conductive protective layer, wherein an outer surface of the polymer insulating layer has an inclined profile proximate to where a protruding portion of the conductive via protrudes from the backside surface of the substrate and contacts the polymer insulating layer.
A Through-Silicon-Via (TSV) structure comprising:
- a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, the conductive via being free of a groove to provide a planar upper surface of the conductive via;
- a conductive protective layer comprising Nickel and/or Cobalt at a bottom of the conductive via;
- and
- a polymer insulating layer on the backside surface of the substrate in contact with the conductive protective layer, wherein the polymer insulating layer has a viscosity comprising about 290 cP, a resistivity of about 1010 ohm-cm, and a modulus of about 1 GPa to about 3 GPa.
A Through-Silicon-Via (TSV) structure comprising:
- a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface;
- a conductive protective layer comprising Nickel and/or Cobalt at on side walls of the conductive via and absent from a bottom of the conductive via;
- and
- a polymer insulating layer on the backside surface of the substrate in contact with the conductive protective layer.
Dependencies are inferred from the claim text.