Barrier film and method of producing barrier film
AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorsKunio Akedo, Atsushi Miura, Koji Noda, Hisayoshi Fujikawa
Life of this patent
Estimating the term…
Abstract
A barrier film formed on top of a substrate, a barrier film formed so as to cover a functional element region fabricated on top of a substrate, or a barrier film formed on both a substrate and a functional element region, wherein the barrier film includes at least one layer of a silicon nitride film formed by laminating two or more silicon nitride layers having different Si/N composition ratios.
Claims6
A barrier film formed on top of a substrate, the barrier film formed so as to cover a functional element region fabricated on top of the substrate, or the barrier film formed on both the substrate and the functional element region, the barrier film comprising:
- at least one layer of a silicon nitride film formed by laminating two or more silicon nitride layers having different Si/N composition ratios,
- wherein if, in a Fourier transform infrared absorption spectrum, a peak intensity in a vicinity of 3350 cm−1 attributable to a N—H stretching vibration is termed A, a peak intensity in a vicinity of 860 cm−1 attributable to a Si—N stretching vibration is termed B, and a peak intensity in a vicinity of 2160 cm−1 attributable to a Si—H stretching vibration is termed C, then the silicon nitride film includes a layer for which the A/B value is not more than approximately 0.08 and the A/C value is not more than approximately 0.3, and a different layer, and a film thickness of a single layer of the layer for which the A/B value is not more than approximately 0.08 and the A/C value is not more than approximately 0.3 is not more than approximately 50 nm.
Dependencies are inferred from the claim text.