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US 8,026,569 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorToshiaki Miura
Life of this patent
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Abstract
In one embodiment of the present invention, a semiconductor device has a photodiode over a P-type substrate, an NPN transistor formed over the P-type substrate, an N+-type buried region provided right under the NPN transistor as being buried in the P-type substrate, and a P+-type buried region formed in the N+-type buried region.
Claims6
A semiconductor device having a light receiving element over a first-conductivity-type substrate, comprising:
- a bipolar transistor formed over said first-conductivity-type substrate, the bipolar transistor having a second-conductivity-type well and a collector composed of a second-conductivity-type diffusion layer provided as being brought into contact with said second-conductivity-type well;
- a second-conductivity-type buried region, reversed in the conductivity type from the first conductivity type, provided right under said bipolar transistor as being buried in said first-conductivity-type substrate;
- and
- a first-conductivity-type buried region provided in said second-conductivity-type buried region and being brought into contact with said second-conductivity-type well.
1 more element
Dependencies are inferred from the claim text.