Thin film semiconductor device comprising nanocrystalline silicon powder

Abstract

A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate 10 of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are printed using an offset lithography printing process. A first active layer comprises source 12.1 and drain 12.2 conductors of colloidal silver ink, that are printed directly onto the paper substrate. A second active layer is an intrinsic semiconductor layer 14 of colloidal nanocrystalline silicon ink which is printed onto the first layer. A third active layer comprises a metallic conductor 16 of colloidal silver which is printed onto the second layer to form a gate electrode. This invention extends to other thin film semiconductors such as photovoltaic cells and to a method of manufacturing semiconductors.

Dependencies are inferred from the claim text.