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US 8,026,562 B2Granted
Magnetic memory element utilizing spin transfer switching
AssigneeIndustrial Technology Research Institute
InventorsWei-Chuan Chen, Cheng-Tyng Yen, Ding-Yeong Wang
Life of this patent
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Abstract
A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.
Claims12
A magnetic memory element utilizing spin transfer switching, comprising:
- a pinned layer;
- a tunneling barrier layer, disposed on the pinned layer;
- a free layer, disposed on the tunneling barrier layer;
- a stabilizing layer, disposed on the free layer;
- and
- a spacer layer, disposed between the free layer and the stabilizing layer, wherein the spacer layer is in direct contact with the free layer and the stabilizing layer.
3 more elements
Dependencies are inferred from the claim text.