Spin MOSFET and reconfigurable logic circuit

A spin MOSFET, comprising:

• a source unit and a drain unit provided at a distance from each other on a semiconductor substrate, one of the source unit and the drain unit comprising a first ferromagnetic stacked film that includes a first ferromagnetic layer having a fixed magnetization direction perpendicular to a film plane, the other one of the source unit and the drain unit comprising a second ferromagnetic stacked film that includes a second ferromagnetic layer having a variable magnetization direction perpendicular to a film plane, a first tunnel barrier provided on the second ferromagnetic layer, and a third ferromagnetic layer provided on the first tunnel barrier and having a fixed magnetization direction perpendicular to a film plane and antiparallel to the magnetization direction of the first ferromagnetic layer;
• a gate insulating film provided on a portion of the semiconductor substrate, the portion being located between the source unit and the drain unit;
• a gate electrode provided on the gate insulating film;
• a first hard bias film provided above the gate electrode;
• a second hard bias film provided above a portion of the semiconductor substrate, the portion being located on a first side of the source unit, the first side being opposite to a second side on which the first hard bias film is disposed;
• and
• a third hard bias film provided above a portion of the semiconductor substrate, the portion being located on a third side of the drain unit, the third side being opposite to a fourth side on which the first hard bias film is disposed,
• magnetization directions of the first through third hard bias films being parallel to the magnetization direction of the third ferromagnetic layer.