Semiconductor device with increased channel length and method for fabricating the same

A semiconductor device, comprising:

• a substrate with an active region including a planar active region and a prominence active region formed on the planar active region, wherein the prominence active region has rounded edges;
• a gate insulation layer formed over the active region;
• and
• a gate structure including at least one gate lining layer encompassing the prominence active region on the gate insulation layer, wherein the prominence active region is an epitaxial layer grown on the planar active region through a selective epitaxial growth method.