Bipolar/dual FET structure having FETs with isolated channels
AssigneeSkyworks Solutions, Inc.
InventorsPeter J. Zampardi, HsiangChih Sun
Life of this patent
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Abstract
According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET and a depletion-mode FET situated over the substrate. In the bipolar/dual FET structure, the channel of the enhancement-mode FET is situated above the base of the bipolar transistor and the channel of the depletion-mode FET is situated below the base of the bipolar transistor. The channel of the enhancement-mode FET is isolated from the channel of the depletion-mode FET so as to decouple the enhancement-mode FET from the depletion mode FET.
Claims20
A bipolar/dual FET structure situated on a substrate, comprising:
- a bipolar transistor situated over said substrate;
- a first FET and a second FET situated over said substrate;
- and
- a channel of said first FET being situated above a base of said bipolar transistor, and a channel of said second FET being situated below said base of said bipolar transistor.
A bipolar/dual FET structure situated on a substrate, comprising:
- a bipolar transistor situated over said substrate, said bipolar transistor including a base situated over a collector and a sub-collector situated under said collector;
- a first FET and a second FET situated over said substrate;
- and
- a channel of said first FET being situated above said base of said bipolar transistor and a channel of said second FET being situated below said sub-collector of said bipolar transistor, thereby decoupling said first FET from said second FET.
Dependencies are inferred from the claim text.