Thin film transistor and organic electroluminescence display using the same
AssigneesHitachi, Ltd., Tokyo Institute of Technology
InventorsMasatoshi Wakagi, Junichi Hanna
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Abstract
In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.
Claims9
A thin film transistor provided with a semiconductor layer comprising a polycrystalline thin film, a source electrode, a drain electrode and a gate electrode on an insulating substrate,
- wherein said thin film transistor is a bottom gate type, and
- wherein said polycrystalline thin film contains Si and Ge, and a Ge concentration on the insulating substrate side of said polycrystalline thin film is higher than a Ge concentration on the side opposite to the insulating substrate side of said polycrystalline thin film.
A thin film transistor provided with a semiconductor layer comprising a polycrystalline thin film, a source electrode, a drain electrode and a gate electrode on an insulating substrate, wherein said polycrystalline thin film contains Si and Ge, and a crystalline orientation of said polycrystalline thin film indicates a random orientation in a region of a film thickness of equal to or smaller than 20 nm at the insulating substrate side, and indicates a (110) orientation at the film surface side.
An organic electroluminescence display provided with a thin film transistor comprising a polycrystalline thin film, a source electrode, a drain electrode and a gate electrode on an insulating substrate,
- wherein said thin film transistor is a bottom gate type, and
- wherein said polycrystalline thin film contains Si and Ge, and a Ge concentration on the insulating substrate side of said polycrystalline thin film is higher than a Ge concentration on the side opposite to the insulating substrate side of said polycrystalline thin film.
An organic electroluminescence display provided with a semiconductor layer comprising a polycrystalline thin film, a source electrode, a drain electrode and a gate electrode on an insulating substrate, wherein said polycrystalline thin film contains Si and Ge, and crystalline orientation of said polycrystalline thin film indicates a random orientation in a region of a film thickness of 20 nm at the insulating substrate side, and indicates a (110) orientation at the film surface side.
Dependencies are inferred from the claim text.