Nitride semiconductor free-standing substrate and device using the same
AssigneeHitachi Cable, Ltd.
InventorHajime Fujikura
Life of this patent
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Abstract
A nitride semiconductor free-standing substrate includes a surface inclined in a range of 0.03° to 1.0° from a C-plane, and an off-orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is displaced in a range of 0.5° to 16° from a particular M-axis orientation of six-fold symmetry M-axis orientations. The substrate does not include a region of −0.5°<φ<+0.5° on the surface, where φ represents a displacement angle of the off-orientation on a surface of the substrate from the particular M-axis orientation.
Claims15
A nitride semiconductor free-standing substrate, comprising:
- a surface inclined in a range of 0.03° to 1.0° from a C-plane,
- wherein an off-orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is displaced in a range of 0.5° to 16° from a particular M-axis orientation of six-fold symmetry M-axis orientations, and
- wherein the substrate does not include a region of −0.5°<φ<+0.5° on the surface, where φ represents a displacement angle of the off-orientation from the particular M-axis orientation.
Dependencies are inferred from the claim text.