Thin film transistor array panel and method for manufacturing the same, and liquid crystal display
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Seuk Kim, Yui-Ku Lee, Byoung-Joo Kim, Chul Huh
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Abstract
A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole.
Claims10
A thin film transistor array panel comprising:
- a substrate;
- a first thin film transistor formed on the substrate;
- a color filter formed on the first thin film transistor and having a through hole;
- a capping layer formed on the color filter, and having an opening;
- and
- a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole,
- wherein parts of the pixel electrode are located within the opening and are in direct contact with portions of the color filter outside the through hole.
A method for manufacturing a thin film transistor array panel comprising:
- forming a plurality of thin film transistors on a substrate;
- forming a color filter having a through hole on the thin film transistor;
- forming a capping layer on the color filter;
- forming a first opening at a position corresponding to the through hole and larger than the area of the through hole in the capping layer;
- and
- forming a pixel electrode connected to the thin film transistor through the through hole and the opening on the capping layer,
- wherein the parts of the pixel electrode are located within the first opening and are in direct contact with portions of the color filter outside the through hole.
A method for manufacturing a thin film transistor array panel comprising:
- forming a plurality of thin film transistors on a substrate;
- forming a color filter having a through hole on the thin film transistor;
- forming a capping layer on the color filter;
- forming a first opening at a position corresponding to the through hole and larger than the area of the through hole in the capping layer;
- and
- forming a pixel electrode connected to the thin film transistor through the through hole and the opening on the capping layer,
- wherein the first opening contacts portions of the color filter outside the through hole,
- wherein the forming of the first opening comprises:
- forming a second opening disposed on a portion corresponding to an edge of the pixel electrode in the capping layer.
Dependencies are inferred from the claim text.