Semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar
Life of this patent
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Abstract
A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.
Claims20
A device comprising semiconductor memories, the device comprising:
- a first monocrystalline silicon transferred layer;
- a second monocrystalline silicon transferred layer;
- wherein said first monocrystalline silicon transferred layer comprises a first plurality of horizontally-oriented transistors;
- wherein said second monocrystalline silicon transferred layer comprises a second plurality of horizontally-oriented transistors;
- and wherein said second plurality of horizontally-oriented transistors overlays said first plurality of horizontally-oriented transistors.
A device comprising semiconductor memories, the device comprising:
- a first monocrystalline silicon transferred layer;
- a second monocrystalline silicon transferred layer, wherein said first monocrystalline silicon transferred layer comprises a first plurality of horizontally-oriented transistors;
- wherein said second monocrystalline silicon transferred layer comprises a second plurality of horizontally-oriented transistors;
- wherein said first monocrystalline silicon transferred layer further comprises a first plurality of select lines as memory cell control lines, and wherein said second monocrystalline silicon transferred layer further comprises a second plurality of select lines as memory cell control lines.
A device comprising semiconductor memories, said device comprising:
- a first monocrystalline silicon transferred layer;
- a second monocrystalline silicon transferred layer, wherein said first monocrystalline silicon transferred layer comprises a first plurality of horizontally-oriented transistors;
- wherein said second monocrystalline silicon transferred layer comprises a second plurality of horizontally-oriented transistors;
- wherein said first plurality of horizontally-oriented transistors and said second plurality of horizontally-oriented transistors have side gates.
Dependencies are inferred from the claim text.