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US 8,026,518 B2Granted
Semiconductor device and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsChiho Kokubo, Hirokazu Yamagata, Shunpei Yamazaki
Life of this patent
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Abstract
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.
Claims18
An electronic device comprising:
- (a) a main body;
- (b) an antenna attached to the main body;
- and
- (c) a liquid crystal device attached to the main body, the liquid crystal device comprising:
- a first thin film transistor over a first substrate having an insulating surface, the first thin film transistor comprising at least a channel forming region, a source region, and a drain region,
- a first wiring electrically connected to the first thin film transistor;
- a driver circuit comprising a second thin film transistor over the first substrate;
- a leveling film over the first thin film transistor, the second thin film transistor, and the first wiring, the leveling film having an opening to reach the first wiring;
- a pixel electrode formed over the leveling film and connected to the first wiring through the opening of the leveling film;
- an alignment film on the pixel electrode;
- a first spacer adjacent to the alignment film where the first spacer overlaps the opening of the leveling film at least partly;
- a second spacer over the driver circuit and the leveling film;
- a second substrate opposed to the first substrate with the first and second spacers interposed therebetween;
- and
- a liquid crystal between the first and second substrates,
- wherein the liquid crystal is disposed over the pixel electrode and the driver circuit.
13 more elements
An electronic device comprising:
- (a) a main body;
- (b) an antenna attached to the main body;
- and
- (c) a liquid crystal device attached to the main body, the liquid crystal device comprising:
- a first thin film transistor over a first substrate having an insulating surface, the first thin film transistor comprising at least a channel forming region, a source region, and a drain region,
- a first wiring electrically connected to the first thin film transistor;
- a driver circuit comprising a second thin film transistor over the first substrate;
- a leveling film over the first thin film transistor, the second thin film transistor and the first wiring, the leveling film having an opening to reach the first wiring;
- a pixel electrode formed over the leveling film and connected to the first wiring through the opening of the leveling film;
- a first spacer over the pixel electrode where the first spacer overlaps the opening of the leveling film at least partly;
- a second spacer over the driver circuit and the leveling film;
- a second substrate opposed to the first substrate with the first and second spacers interposed therebetween;
- and
- a liquid crystal between the first and second substrates,
- wherein the liquid crystal is disposed over the pixel electrode and the driver circuit.
12 more elements
An electronic device comprising:
- (a) a main body;
- (b) an antenna attached to the main body;
- and
- (c) a liquid crystal device attached to the main body, the liquid crystal device comprising:
- a first thin film transistor over a first substrate having an insulating surface, the first thin film transistor comprising:
- a semiconductor film comprising silicon formed over the first substrate;
- a gate insulating film formed over the semiconductor film;
- and
- a gate electrode formed over the semiconductor film with the gate insulating film interposed therebetween,
- a driver circuit comprising a second thin film transistor over the first substrate;
- a first interlayer insulating film formed over the first thin film transistor and the second thin film transistor;
- a wiring formed over the first interlayer insulating film and electrically connected to the first thin film transistor through a first contact hole of the first interlayer insulating film;
- a second interlayer insulating film formed over the driver circuit, the wiring and the first interlayer insulating film;
- a pixel electrode formed over the second interlayer insulating film wherein the pixel electrode is electrically connected to the wiring through a second contact hole of the second interlayer insulating film;
- a first spacer formed over the pixel electrode;
- a second spacer formed over the driver circuit and the second interlayer insulating film;
- a second substrate opposed to the first substrate;
- a liquid crystal between the first and second substrates;
- wherein the liquid crystal is disposed over the pixel electrode and the driver circuit, and
- wherein the first spacer overlaps the second contact hole of the second interlayer insulating film at least partly.
17 more elements
An electronic device comprising:
- (a) a main body;
- (b) an antenna attached to the main body;
- and
- (c) a liquid crystal device attached to the main body, the liquid crystal device comprising:
- a first thin film transistor over a first substrate having an insulating surface, the first thin film transistor comprising:
- a semiconductor film comprising silicon formed over the first substrate;
- a gate insulating film formed over the semiconductor film;
- and
- a gate electrode formed over the semiconductor film with the gate insulating film interposed therebetween,
- a driver circuit comprising a second thin film transistor over the first substrate;
- a first interlayer insulating film formed over the first thin film transistor and the second thin film transistor;
- a wiring formed over the first interlayer insulating film and electrically connected to the first thin film transistor through a first contact hole of the first interlayer insulating film;
- a second interlayer insulating film formed over the driver circuit, the wiring and the first interlayer insulating film;
- a pixel electrode formed over the second interlayer insulating film wherein the pixel electrode is electrically connected to the wiring through a second contact hole of the second interlayer insulating film;
- an alignment film formed on the pixel electrode;
- a first spacer adjacent to the alignment film;
- a second spacer formed over the driver circuit and the second interlayer insulating film;
- a second substrate opposed to the first substrate;
- and
- a liquid crystal between the first and second substrates,
- wherein the liquid crystal is disposed over the pixel electrode and the driver circuit, and
- wherein the first spacer overlaps the second contact hole of the second interlayer insulating film at least partly.
19 more elements
Dependencies are inferred from the claim text.