Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a light detecting unit including a single electron transistor, the single electron transistor including a second gate electrode, a second quantum dot on the second gate electrode, and source/drain contacting both sides of the second quantum dot, respectively;
• a light receiving unit including a single electron box, the single electron box including a first quantum dot on the second quantum dot, a charge storage gate on the first quantum dot, and a first gate electrode on the charge storage gate;
• a first insulation layer interposed between the first and second quantum dots and capacitively coupling the first and second quantum dots;
• and
• an light incident unit including an optical element and a light adjusting element and being adjacent to the light receiving unit to allow a single photon to be locally incident to the light receiving unit, the optical element irradiating light, the optical adjusting element having a smaller aperture than a wavelength of the light.

A semiconductor device comprising:

• a single electron box comprising:
• a first quantum dot having a first width in a first direction and a second width in a second direction perpendicular to the first direction,
• a charge storage gate on the first quantum dot,
• a first gate electrode on the charge storage gate, and
• a tunnel insulation layer between the charge storage gate and the first quantum dot;
• and
• a single electron transistor comprising
• a second quantum dot below the first quantum dot wherein the second quantum dot has the same widths as the first width and the second width,
• a source,
• a drain,
• a second gate electrode below the second quantum dot, the source contacting one side of the second quantum dot, the drain contacting the other side facing the one side, the second gate electrode adjusting electric potential of the second quantum dot,
• a gate insulation layer interposed between the source and the second gate electrode, between the drain and the second gate electrode, and between the second quantum dot and the second gate electrode.