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US 8,026,505 B2Granted
Memory device
AssigneeMacronix International Co., Ltd.
InventorHsiang-Lan Lung
Life of this patent
Estimating the term…
Abstract
A memory device is described. The memory device comprises a bottom electrode, a first pair of spacers, a second pair of spacers and a phase-change element. The bottom electrode has a lower horizontal portion and a vertical portion, and the vertical portion has a top surface and a side. The first pair of spacers covers the side of the vertical portion. The second pair of spacers covers a first portion of the top surface of the vertical portion. The phase-change element is contacted a second portion of the top surface of the vertical portion.
Claims16
A memory device, comprising:
- a bottom electrode having a lower horizontal portion and a vertical portion and an upper portion, the vertical portion having a top surface and a side;
- a first pair of spacers covering the side of the vertical portion;
- a second pair of spacers covering a first portion of the top surface of the vertical portion and exposing a second portion of the top surface of the vertical portion;
- and
- a phase-change element contacting the second portion of the top surface of the vertical portion.
2 more elements
A memory device, comprising:
- an L-shape bottom electrode having a top surface and a side;
- a first spacer covering the side of the bottom electrode;
- a second spacer covering a first portion of the top surface of the bottom electrode and exposing a second portion of the top surface of the bottom electrode;
- and
- a memory element contacting the second portion of the top surface of the bottom electrode.
2 more elements
Dependencies are inferred from the claim text.