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US 8,026,503 B2Granted
Phase-change memory and method of making same
AssigneeNanya Technology Corporation
InventorLi-Shu Tu
Life of this patent
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Abstract
A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.
Claims9
A phase-change memory cell structure, comprising:
- a bottom diode on a substrate;
- a heating stem on the bottom diode;
- a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem, wherein the first dielectric layer extends to a sidewall of the heating stem and encompasses the heating stem to form an upward protruding cylindrical feature;
- a phase-change storage cap capping the heating stem and the first dielectric layer, wherein the phase-change storage cap at least covers an upper portion of a sidewall of the upward protruding cylindrical feature underneath the phase-change storage cap;
- and
- a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.
3 more elements
Dependencies are inferred from the claim text.