Charged particle beam apparatus and control method therefor
AssigneeHitachi High-Technologies Corporation
InventorsMuneyuki Fukuda, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi High-Technologies Corporation
InventorsMuneyuki Fukuda, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
Estimating the term…
Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.
A charged particle beam apparatus comprising:
A charged particle beam apparatus comprising:
A charged particle beam apparatus comprising:
A method of controlling a charged particle beam apparatus, in which a specimen is measured on a basis of distribution data of secondary charged particles generated by irradiating the specimen with a charged particle beam, comprising:
Dependencies are inferred from the claim text.